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APT20GT60BR
APT20GT60BR
600V 40A
Thunderbolt IGBT
The Thunderbolt IGBTTM is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBTTM offers superior ruggedness and ultrafast switching speed.
TO-247
* Low Forward Voltage Drop * Low Tail Current * Avalanche Rated
MAXIMUM RATINGS
Symbol VCES VCGR VEC VGE I C1 I C2 I CM I LM EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage
* High Freq. Switching to 150KHz * Ultra Low Leakage Current * RBSOA and SCSOA Rated
G
C
C E
G E
All Ratings: TC = 25C unless otherwise specified.
APT20GT60BR UNIT
600 600 15 20 40 20 80 40 40 175 -55 to 150 300
mJ Watts C Amps Volts
Collector-Gate Voltage (RGE = 20KW) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 90C Pulsed Collector Current
1
@ TC = 25C
RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125C Single Pulse Avalanche Energy Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
2
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES RBVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) Gate Threshold Voltage (VCE = VGE, I C = 500A, Tj = 25C) MIN TYP MAX UNIT
600 -15 3 1.6 4 2.0 5 2.5 2.8 40 1000 100
3-2001 052-6210 RevC
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = IC2, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = IC2, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V)
I CES I GES
A nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA EUROPE
405 S.W. Columbia Street Chemin de Magret
Bend, Oregon 97702-1035 F-33700 Merignac - France
Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS
Symbol Cies C oes Cres Qg Q ge Q gc td(on) tr td(off) tf td(on) tr td(off) tf E on Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT20GT60BR
Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES I C = I C2 Resistive Switching (25C) VGE = 15V VCC = 0.5VCES I C = I C2 RG = 10W MIN TYP MAX UNIT
1045 110 65 91 5.9 40 9.0 27 112 162 13
1200 160 110 140 10 60 20 50 170 320 26 30 260 220 470 1190 1660 20 30 190 90 1150
uJ S ns uJ ns ns nC pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Switching Losses Forward Transconductance
Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W TJ = +150C
15 170 110 235 595 830
Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W TJ = +25C VCE = 20V, I C = I C2
12 16 129 45 575 4
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RQJC RQJA WT Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.72 40 0.22
oz gm
Package Weight
6.1 10
lb*in N*m
Torque
Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw)
1.1
3-2001 1 2 3
Repetitive Rating: Pulse width limited by maximum junction temperature. IC = IC2, VCC = 50V, RGE = 25W, L = 200H, Tj = 25C See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6210
RevC
APT20GT60BR
40 IC, COLLECTOR CURRENT (AMPERES) VGE=15, 10 & 9V 8V 30 IC, COLLECTOR CURRENT (AMPERES) 40 VGE=15, 10 & 9V 8V 30
20
7V
20
7V
10 6V 5V 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 1, Typical Output Characteristics (TJ = 25C) 0 60
250Sec. Pulse Test VGE = 15V
10
6V
5V 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 2, Typical Output Characteristics (T J = 150C) 80 0
IC, COLLECTOR CURRENT (AMPERES)
50 40 30 20
TC=-55C TC =+25C TC=+150C
IC, COLLECTOR CURRENT (AMPERES)
OPERATION LIMITED BY VCE (SAT)
100S
10 5 TC =+25C TJ =+150C SINGLE PULSE 1 5 10 50 100 600 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 4, Maximum Forward Safe Operating Area 1 1mS
10 0 0 1 2 3 4 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 3, Typical Output Characteristics @ VGE = 15V
10mS
VGE, GATE-TO-EMITTER VOLTAGE (VOLTS)
3,000 C ies 1,000 C, CAPACITANCE (pF) 500
f = 1MHz
20
IC = IC2 TJ = +25C
V CE =120V
16 VCE =300V V CE =480V 8
12
C oes 100 50 C res
4
10 0.01 0.1 1.0 10 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage 1.0 ZqJC, THERMAL IMPEDANCE (C/W) 0.5 D=0.5 0.2 0.1 0.05 0.1 0.05 0.02 0.01 0.01 0.005 SINGLE PULSE
40 80 120 160 Qg, TOTAL GATE CHARGE (nC) Figure 6, Gate Charges vs Gate-To-Emitter Voltage
0
0
Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
0.001
10 -5
052-6210
10 -3 10 -2 10 -1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10 -4
10
RevC
3-2001
APT20GT60BR
4.0 IC, COLLECTOR CURRENT (AMPERES) VCE(SAT), COLLECTOR-TO-EMITTER SATURATION VOLTAGE (VOLTS) 40
3.5 3.0 2.5 IC2 2.0 0.5 IC2 1.5 1.0 IC1
30
20
10
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature 1.2 SWITCHING ENERGY LOSSES (mJ)
50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 9, Maximum Collector Current vs Case Temperature 1.0
VCC = 0.66 VCES VGE = +15V TJ = +25C IC = IC2
0
25
1.1
0.8
1
0.6
E off
0.9
0.4 E on 0.2
0.8
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 10, Breakdown Voltage vs Junction Temperature 2.0 IC1 1.0
0.7
20 40 60 80 100 RG, GATE RESISTANCE (OHMS) Figure 11, Typical Switching Energy Losses vs Gate Resistance .6 SWITCHING ENERGY LOSSES (mJ) .5 .4 E off .3 .2 E on .1 0
VCC = 0.66 VCES VGE = +15V TJ = +125C RG = 10 W
0
0
TOTAL SWITCHING ENERGY LOSSES (mJ)
IC2
0.5 IC2
VCC = 0.66 VCES VGE = +15V RG = 10 W
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 12, Typical Switching Energy Losses vs. Junction Temperature 100 IC, COLLECTOR CURRENT (AMPERES)
0.1
10 20 30 IC, COLLECTOR CURRENT (AMPERES) Figure 13, Typical Switching Energy Losses vs Collector Current
For Both: Duty Cycle = 50% TJ = +125C Tsink = +90C Gate drive as specified Power dissapation = 49W ILOAD = IRMS of fundamental
0
10
RevC
3-2001
1 0.1 1.0 10 F, FREQUENCY (KHz) Figure 14,Typical Load Current vs Frequency 100 1000
052-6210
APT20GT60BR
VCHARGE *DRIVER SAME TYPE AS D.U.T. VCC = 0.66 VCES Et s = E on + E off 90% B 10% t d (on) VC 90% D.U.T. VCE (SAT) 10% tf E on t=2uS E off IC t d(off) 90% A DRIVER* D.U.T. IC 100uH V CLAMP RG A VC B
A
VC IC 10%
tr
Figure 15, Switching Loss Test Circuit and Waveforms
2
VCE(off) 90%
VGE(on)
V CC
RL = 2
.5 VCES
I C2
D.U.T. 10% 1 VGE(off) t d (on) tr t d(off) tf From Gate Drive Circuitry RG
VCE(on)
1
Figure 16, Resistive Switching Time Test Circuit and Waveforms
T0-247 Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
052-6210
RevC
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
3-2001
Gate Collector Emitter

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